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NJG1131HA8 UHF BAND LOW NOISE AMPLIFIER GaAs MMIC
GENERAL DESCRIPTION NJG1131HA8 is a low noise amplifier GaAs MMIC designed for mobile digital TV application (470~770 MHz). This IC features good gain flatness, and low gain characteristic in out-of-band. This IC achieves low current consumption, low noise figure and low distortion. Also, this IC is integrated the ESD protection circuit. An ultra-small and ultra-thin package of USB6-A8 is adopted. PACKAGE OUTLINE
NJG1131HA8
FEATURES Wide operating frequency range Low voltage operation Low current consumption Gain Low noise figure High P-1dB(IN) High Input IP3 Ultra-small & ultra-thin package
470~770MHz +2.7V typ. 3.4mA typ. 10.0dB typ. 1.4dB typ. -5.0dBm typ. +5.0dBm typ. USB6-A8 (Package size: 1mm x 1.2mm x 0.38mm typ.)
PIN CONFIGURATION (Top View)
GND VG
6
RFOUT
1
Bias Circuit
1 Pin INDEX
5
Pin Connection 1. GND 2. RFIN 3. GND 4. GND 5. RFOUT 6. VG
2
RFIN GND
4 3
GND
Note: Specifications and description listed in this catalog are subject to change without notice.
Ver.2007-06-08
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NJG1131HA8
ABSOLUTE MAXIMUM RATINGS Ta=+25C, Zs=Zl=50 ohm PARAMETER Drain Voltage Input power Power dissipation Operating temperature Storage temperature SYMBOL VDD PIN PD Topr Tstg CONDITIONS VDD terminal VDD=2.7V On PCB board, Tjmax=150C RATINGS 5 +15 150 -40~+85 -55~+150 UNITS V dBm mW C C
ELECTRICAL CHARACTERISTICS 1 (DC) General conditions: VDD=2.7V, Ta=+25C, Zs=Zl=50 ohm, with application circuit. PARAMETERS Operating voltage Operating Current SYMBOL VDD IDD RF OFF CONDITIONS MIN 2.3 TYP 2.7 3.4 MAX 3.6 5.0 UNITS V mA
ELECTRICAL CHARACTERISTICS 2 (RF) General conditions: VDD= 2.7V, fRF=470~770MHz, Ta=+25C, Zs=Zl=50 ohm, with application circuit. PARAMETERS Operating Frequency Small signal gain Gain flatness Noise figure Input power at 1dB gain compression point Input 3rd order intercept point RF IN VSWR RF OUT VSWR SYMBOL fRF Gain Gflat NF P-1dB(IN) IIP3 VSWRi VSWRo f1=fRF, f2=fRF+100kHz, Pin=-28dBm Exclude PCB & connector losses (0.05dB) CONDITIONS MIN 470 8.0 -8.0 +2.0 TYP 620 10.0 1.1 1.4 -5.0 +5.0 2.6 2.9 MAX 770 12.0 1.4 1.8 3.0 3.3 UNITS MHz dB dB dB dBm dBm
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NJG1131HA8
TERMINAL INFORMATION No. 1 2 3 4 SYMBOL GND RFIN GND GND Ground terminal. RF input terminal. This terminal requires the DC-blocking capacitor and the DC-feed Inductor as shown in the application circuit. Ground terminal. Ground terminal. RF output terminal. This terminal requires the external matching circuit as shown in the application circuit. Power supply pin of the bias circuit. Please supply the voltage as same as the LNA voltage. DESCRIPTION
5
RFOUT
6
VG
CAUTION 1) Ground terminals (1pin, 3pin and 4pin) should be connected with the ground plane close as possible.
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NJG1131HA8
ELECTRICAL CHARACTERISTICS (Conditions: Ta=+25C, VDD=2.7V, Zs=Zl=50 ohm, with application circuit.)
Pout vs. Pin
(fRF=620MHz) 10 5 0 -5 Pout (dBm)
Gain, IDD vs. Pin
(fRF=620MHz) 12 11 Gain 10 Gain (dB) 9 8 7 6 5 IDD 6 IDD (mA)
NF (dB)
8 7
5 4 3 2 1 P-1dB(IN)=-3.4dBm 0 -40 -35 -30 -25 -20 -15 -10 -5 0 Pin (dBm)
-10 Pout -15 -20 -25 -30 P-1dB(IN)=-3.4dBm -35 -40 -35 -30 -25 -20 Pin (dBm) -15 -10 -5 0
4
Pout, IM3 vs. Pin
(f1=620MHz, f2=620.1MHz) 20 0 -20 -40 -60 -80 IM3 -100 -40 -30 -20 -10 IIP3=+7.6dBm 0 10 Pout
Gain, NF vs. Frequency
12 11 Gain 10 Gain (dB) 9 8 7 NF 6 5 4 400 450 500 550 600 650 700 750 Frequency (MHz) 1 0.5 0 800 3 2.5 2 1.5 4 3.5
Pout, IM3 (dBm)
Pin (dBm)
P-1dB(IN) vs. Frequency
5
IIP3, OIP3 vs. Frequency
(f1=Frequency, f2=Frequency+0.1MHz, Pin=-28dBm) 20 OIP3
0 P-1dB(IN) (dBm) P-1dB(IN) -5
15 IIP3, OIP3 (dBm)
10
IIP3 5
-10
-15 400
450
500
550 600 650 Frequency (MHz)
700
750
800
0 400
450
500
550
600
650
700
750
800
Frequency (MHz)
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NJG1131HA8
ELECTRICAL CHARACTERISTICS (Conditions: Ta=+25C, VDD=2.7V, Zs=Zl=50 ohm, with application circuit.)
K-factor vs. Frequency
30
Gain, NF vs. VDD
(fRF=620MHz) 12 10 Gain 8 Gain (dB) 6 4 NF 2 0 6 5 4 3 2 1 0 0 1 2 3 VDD (V) 4 5 NF (dB)
25
20
K-factor
15
10
5
0 0 5000 10000 15000 20000
Frequency (MHz)
P-1dB(IN) vs. VDD
(fRF=620MHz) 5 25 20 0 P-1dB(IN) (dBm) IIP3, OIP3 (dBm) 15
IIP3, OIP3 vs. VDD
(f1=620MHz, f2=620.1MHz, Pin=-28dBm)
OIP3 10 5 IIP3 0 -5
P-1dB(IN) -5
-10
-15 0 1 2 VDD (V) 3 4 5
0
1
2 VDD (V)
3
4
5
IDD vs. VDD
(RF OFF) 7 6
VSWR vs. VDD
(fRF=470~770MHz) 8 7 VSWRi(max.), VSWRo(max.) 6 5 4 VSWRo(max.) 3 2 1 0 VSWRi(max.)
5 IDD (mA) 4 3 IDD 2 1 0 0 1 2 VDD (V) 3 4 5
0
1
2 VDD (V)
3
4
5
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NJG1131HA8
ELECTRICAL CHARACTERISTICS (Conditions: VDD=2.7V, Zs=Zl=50 ohm, with application circuit.)
Gain, NF vs. Temp.
(fRF=620MHz) 12 Gain 10 5 0 8 Gain (dB) 4 NF (dB) P-1dB(IN) (dBm) P-1dB(IN) -5 6 5
P-1dB(IN) vs. Temp.
(fRF=620MHz)
6
3
4 NF 2
2
-10 1
0 -50
0
50 Temperature (C o)
0 100
-15 -50
0 50 Temperature (C o)
100
IIP3, OIP3 vs. Temp.
(f1=620MHz, f2=620.1MHz, Pin=-28dBm) 25 7 6 20 OIP3 IIP3, OIP3 (dBm) IDD (mA) 15 5 4 3 IDD 2 1 0 -50 0 -50
IDD vs. Temp.
(RF OFF)
10 IIP3 5
0
50 Temperature (C )
o
100
0
50 Temperature (C o)
100
VSWR vs. Temp.
(fRF=470~770MHz) 8 7 VSWRi(max.), VSWRo(max.) 6 5 4 VSWRo(max.) 3 2 1 0 -50 VSWRi(max.)
0
50 Temperature (C o)
100
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NJG1131HA8
ELECTRICAL CHARACTERISTICS (Conditions: Ta=+25C, VDD=2.7V, Zs=Zl=50 ohm, with application circuit.)
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22 (~20GHz)
S21, S12 (~20GHz)
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NJG1131HA8
TEST CIRCUIT
C3 1000pF
VDD=2.7V
GND
VG
6
RFOUT
L3 27nH
RFOUT
L2 56nH C2 3pF
1
Bias Circuit
5
RFIN 2
C1 68pF
RFIN L1 33nH GND
4 3
GND
TEST PCB LAYOUT
Parts List Parts ID VDD L1~L3
C3 L3 L1 L2 C2
Notes MURATA (LQP03T series) MURATA (GRM03 series)
C1~C3
RF IN
C1
RF OUT
PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z0=50 ohm) PCB SIZE=16.8mmx16.8mm
PRECAUTIONS [1] C1 is a DC-Blocking capacitor, and L1 is a DC-feed inductor. [2] L2, L3, and C2 formed the output matching circuit. [3] C3 is a bypass capacitor. [4] Ground terminals (1pin, 3pin and 4pin) should be connected with ground plane as close as possible in order to limit ground path induction. [5] All external parts are placed as close as possible to the IC.
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NJG1131HA8
MEASUREMENT BLOCK DIAGRAM VDD=2.7V VDD=2.9V
RF Input DUT
RF Output
Port1
Port2
Network Analyzer
S parameter Measurement Block Diagram
VDD=2.7V VDD=2.9V
RF Input
RF Output DUT
N.S. Output Noise Source
Input
NF Analyzer Meter
Noise Figure Measurement Block Diagram
freq1
Signal Generator
3dB Attenuator
VDD=2.7V
RF Input
Signal Generator Power Comb. 3dB Attenuator
DUT
RF Output
Spectrum Analyzer
freq2
IF and IM3 Measurement Block Diagram for IIP3
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NJG1131HA8
PACKAGE OUTLINE (USB6-A8)
0.380.06
+0.012 0.038-0.009
S
0.03
S
TERMINAL TREAT Substrate Molding material UNIT WEIGHT
:Au :FR5 :Epoxy resin :mm :1.1mg
0.2 (MIN0.15) 6 5 1.20.05
0.20.04 C0.1 R0.05 1 0.10.05
Photo resist coating
0.8 0.4 0.6 0.20.04 2 3 0.4 1.00.05 0.20.07
4
Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages.
[CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.
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